Protection circuit for power management semiconductor...

Electricity: electrical systems and devices – Safety and protection of systems and devices – With specific voltage responsive fault sensor

Reexamination Certificate

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C361S091500, C361S093900

Reexamination Certificate

active

10773283

ABSTRACT:
A collector voltage of a power management semiconductor device is detected by a first comparator, and when the detected collector voltage exceeds a first reference voltage, the first comparator outputs a first detection signal. Furthermore, a gate voltage of the power management semiconductor device is detected by a second comparator, and when the detected gate voltage exceeds a second reference voltage, the second comparator outputs a second detection signal. The second reference voltage is a minimum gate voltage for feeding a rated power to the power management semiconductor device or over, and less than a line power voltage of a drive circuit of the power management semiconductor device. When both the first detection signal and second detection signal are being outputted, the gate voltage is reduced by a gate voltage reduction means so as to protect the power management semiconductor device from overcurrent and overvoltage.

REFERENCES:
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patent: 2004/0075103 (2004-04-01), Topp et al.
patent: 2-262826 (1990-10-01), None
patent: P2000-295838 (2000-10-01), None
P. Horowitz et al., The Art of Electronics, Cambridge University Press, 2nd ed., pp. 52-53.

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