Electricity: electrical systems and devices – Safety and protection of systems and devices – Load shunting by fault responsive means
Patent
1976-04-14
1977-07-19
Moose, Jr., Harry E.
Electricity: electrical systems and devices
Safety and protection of systems and devices
Load shunting by fault responsive means
307304, 361 58, H02H 320
Patent
active
040371409
ABSTRACT:
The gate of an IGFET, which is directly connected to the input terminal of a circuit is protected by means of first and second diodes connected between the gate and first and second points of operating potential, respectively. The first diode is poled to conduct current in the forward direction when the potential at the gate is more positive than the potential at the first point and the second diode is poled to conduct current in the forward direction when the potential at the gate is more negative than the potential at the second point. A high conductivity diode means is connected between the first and second points of potential. The reverse breakdown voltage (V.sub.R) of the first and second diodes is greater than the V.sub.R of the diode means whereby the first and second diodes conduct only in the forward direction while the diode means conducts in the forward or reverse direction.
REFERENCES:
patent: 3712995 (1973-01-01), Steudel
patent: 3947727 (1976-03-01), Stewart
"Series N-Channel Mosfet Gate Protection Circuit" IBM Tech. Disc. Bul. vol. 13 No. 9.
"Fundamentals of Cos/Mos Integrated circuits" Solid State Technology Apr. 1974, pp. 85-89.
Christoffersen H.
Moose Jr. Harry E.
RCA Corporation
Schanzer Henry I.
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