Protection circuit for insulated-gate field-effect transistors

Details Protection circuit for insulated-gate field-effect transistors Protection circuit for insulated-gate field-effect transistors

1974-12-10

1976-03-30

Miller, J. D.

Amplifiers

Signal feedback

Combined with control of bias voltage of signal amplifier

317 33VR, 330207P, H02H 320

Patent

active

039477274

ABSTRACT:
Two current-carrying paths are connected in parallel between a signal input terminal and an internal node to which are connected the gate electrodes of insulated-gate field-effect transistors to be protected. One path includes the conduction path of a first transistor of one conductivity type connected in series with a first diode poled in a direction to charge the internal node and the other path includes the conduction path of a second transistor of second conductivity type in series with a second diode poled in a direction to discharge the internal node. The control electrodes of the first and second transistors are connected to points of operating potential rendering the first transistor conductive in the source follower mode for input signals of one polarity and rendering the second transistor conductive in the source follower mode for input signals of opposite polarity.

REFERENCES:
patent: 3395290 (1968-07-01), Farina et al.
patent: 3769572 (1973-10-01), Doubt

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