Protection circuit for an insulated gate bipolar transistor util

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307200B, 307270, 307592, 307597, 361 86, 361 88, 361 89, 361101, H03K 1708, H03K 1728

Patent

active

047218690

ABSTRACT:
A driving circuit for an insulated gate bipolar transistor (IGBT) which has a power source, a gate voltage input circuit which supplies the voltage to a gate terminal of IGBT, a detecting circuit for detecting a collector to emitter voltage of the IGBT and an adjusting circuit for lowering the control signal.
When an abnormality is detected by the detecting circuit, the adjusting circuit performs a dropping operation of the gate voltage of the IGBT immediately after the detection or after the passage of a predetermined time following the application of the ON signal to the gate.

REFERENCES:
patent: 4301490 (1981-11-01), Nagel et al.
patent: 4360744 (1982-11-01), Taylor
patent: 4363064 (1982-12-01), Billings et al.
patent: 4363068 (1982-12-01), Burns
patent: 4536816 (1985-08-01), Mausumura et al.
patent: 4543494 (1985-09-01), Wakimoto
patent: 4591734 (1986-05-01), Laughton
patent: 4612457 (1986-09-01), Prater
Smith, M. W., "Applications of Insulated Gate Transistors", Factory Electronics, 1983, Manufacturers, pp. 1-11.
Baliga, et al., "Modulated-Conductivity Devices Reduce Switching Losses", EDN, Sep. 1983.

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