Electricity: electrical systems and devices – Safety and protection of systems and devices – Load shunting by fault responsive means
Patent
1991-11-06
1994-07-26
Pellinen, A. D.
Electricity: electrical systems and devices
Safety and protection of systems and devices
Load shunting by fault responsive means
307568, 361 91, H02H 900, H03K 508
Patent
active
053330935
ABSTRACT:
In order to restrict the voltage across the gate oxide of an input pass-through transistor which operates as an input signal source to a MOS inverter, a MOS transistor wired as a MOS diode is connected between the source and gate electrode of the pass-through transistor. The diode connected transistor allows the use of a thin oxide device for the pass-through transistor which enables a high transconductance device to be employed while restricting the voltage across the gate oxide of the pass-through transistor to an acceptable value.
REFERENCES:
patent: 3819952 (1974-06-01), Enomoto et al.
patent: 4005342 (1977-01-01), Davis
patent: 4061928 (1977-12-01), Kessler
patent: 4295176 (1981-10-01), Wittwer
patent: 4481521 (1984-11-01), Okumura
patent: 4527213 (1985-07-01), Ariizumi
patent: 4930037 (1990-05-01), Woo
Killian Mike A.
Krautschneider Wolfgang H.
Ahmed Adel A.
Leja Ronald W.
Pellinen A. D.
Siemens Aktiengesellschaft
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