Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – active junction...
Patent
1991-04-22
1994-05-10
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, active junction...
257 73, 257530, 257756, 257922, H01L 2904
Patent
active
053110390
ABSTRACT:
An antifuse memory cell having a P.sup.+ polysilicon doping in a region directly under an intrinsic silicon programming layer. The P.sup.+ polysilicon region is surrounded by an N.sup.- polysilicon doped region, and the two regions are sandwiched between layers of silicon dioxide insulation. The interface between the two regions is a P-N junction, in fact, a diode. The diode does not suffer from a diffusion current that increases with increasing levels of N.sup.- doping, therefore the N.sup.- polysilicon can be heavily doped to yield a very conductive bit line interconnect for a memory matrix. The interconnect line widths can be very narrow, and further microminiaturization is aided thereby. The top metalization is aluminum and serves as a word line interconnect in the memory matrix.
REFERENCES:
patent: 4420820 (1983-12-01), Preedy
patent: 4424579 (1984-01-01), Roesner
patent: 4442507 (1984-04-01), Roesner
patent: 4494135 (1985-01-01), Moussie
patent: 4569121 (1986-02-01), Lim et al.
patent: 4598386 (1986-01-01), Roesner et al.
patent: 4796074 (1989-01-01), Roesner
patent: 5070384 (1991-12-01), McCollum et al.
Y. Shacham-Diamand et al., "A Novel Ion-Implanted Amorphous Silicon Programmable Element," IEDM-87, pp. 194-197.
E. Hamdy, et al., "Dielectric Based Antifuse for Logic and Memory ICs," IEDM-88, pp. 786-789.
Kimura Masakazu
Kondo Toshihiko
Crane Sara W.
Seiko Epson Corporation
Tsiang Harold T.
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