Projection lithography apparatus

Details Projection lithography apparatus Projection lithography apparatus

1996-06-25

1997-12-23

Chea, Thorl

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

378 34, 430296, 430396, 430494, H01J 37317

Patent

active

057010145

ABSTRACT:
The invention is directed to a method and apparatus of projection lithography in which the contrast introduced into a radiation sensitive material caused by the proximity effect is effectively removed in a single exposure. Patterned radiation is transmitted through a lens system with at least one lens and a back focal plane filter. The back focal plane filter has at least two apertures, an image aperture and a proximity effect correction aperture. Patterned radiation is transmitted through the image aperture and introduces the desired image into the energy sensitive resist material. A portion of the inverse pattern radiation is transmitted through the proximity effect correction aperture and onto the energy sensitive resist material to effectively remove the contrast therein caused by the proximity effect.

REFERENCES:
patent: 5532496 (1996-07-01), Gaston

Affiliated with

Also associated with

Rating

Projection lithography apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Projection lithography apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Projection lithography apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1804118