Projection lens systems for excimer laser exposure lithography

Details Projection lens systems for excimer laser exposure lithography Projection lens systems for excimer laser exposure lithography

1997-07-16

1999-11-23

Le, N.

Incremental printing of symbolic information

Light or beam marking apparatus or processes

Scan of light

347244, 359662, 359763, 359766, G02B 900, G02B 960

Patent

active

059909269

ABSTRACT:
A projection lens system that is used to transfer a pattern from a reticle onto a wafer, incorporates a projection optical system that is capable of maintaining the same, or increased performance, as the current projection lens systems, and that achieves excellent aberration correction, has a numerical aperture of at least 0.6, an exposure field area of at least 18.7.times.18.7 mm or at least 26.45 mm diameter at the wafer plane, and has a total lens thickness to length ratio less than 0.64 and uses 5 or less aspherical lens surfaces.

REFERENCES:
patent: 5805344 (1998-09-01), Sasaya et al.
patent: 5808814 (1998-09-01), Kudo

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