Projection exposure method

Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement

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Details

430394, 430396, 356401, 355 53, 355 55, C03C 502, G01B 1103

Patent

active

057472025

ABSTRACT:
A method for manufacturing semiconductor devices includes the steps of exposing a pattern for focus measurement, formed on a surface of a reticle and comprising a two-dimensional grid pattern, to radiation and projecting the pattern for focus measurement onto a plurality of regions of an inspection wafer, on which a resist has been coated by a resist coating apparatus, using a projection exposure apparatus; developing the pattern for focus measurement projected on the inspection wafer with a developing apparatus; measuring the developed pattern for focus measurement on a plurality of regions of the inspection wafer with the projection exposure apparatus to obtain the focus position and the inclination of the plane of projection of the image of the pattern for focus measurement of the reticle, and setting the focus position and the inclination of the plane of projection in the projection exposure apparatus as a focus offset and an amount of correction of the inclination of the plane of projection; and coating the surface of the wafer with resist using the resist coating apparatus, exposing a pattern formed on the surface of the reticle to radiation and projecting the pattern onto the resist on the surface of the wafer using the projection exposure apparatus and using the set focus offset and the set amount of correction, and developing the resist using the developing apparatus.

REFERENCES:
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patent: 4999669 (1991-03-01), Sakamoto et al.
patent: 5117254 (1992-05-01), Kawashima et al.
patent: 5124927 (1992-06-01), Hopewell et al.
patent: 5249016 (1993-09-01), Tanaka

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