Projection exposure apparatus

Details Projection exposure apparatus Projection exposure apparatus

1994-04-11

1995-05-23

Rosasco, S.

Photocopying

Projection printing and copying cameras

Reflector between original and photo-sensitive paper

355 71, G03B 2770

Patent

active

054185980

ABSTRACT:
A novel method of pattern formation and a projection exposure apparatus are the pupil of a projection lens of the projection exposure apparatus for forming an LSI pattern or the like, and mount an optical filter having a complex amplitude transmittance distribution expressed substantially as T(r)=cos(2.pi..beta.r.sup.2 -.theta./2) as a function of a radial coordinate r normalized by the maximum radius of the pupil. Alternatively, the Fourier transform of a layout pattern drawn on the LSI is obtained, the obtained Fourier transform data are multiplied by cos(2.pi..beta.f.sup.2 -.theta./2)(where f is a spatial frequency, and .beta., .theta. appropriate real numbers), the inverse Fourier transform of the resulting product is taken to produce a pattern, and this pattern or an approximate solution thereof is used as a mask pattern thereby to produce an LSI by exposure. As a result, even when the NA is increased and the wavelength shortened to improve the resolution limit, a large depth of focus and a high image quality are obtained at the same time. It is thus possible to form a pattern of 0.2 to 0.3 .mu.m by the use of an optical exposure system.

REFERENCES:
patent: 4370405 (1983-01-01), O'Toole et al.
patent: 4902899 (1990-02-01), Lin et al.
patent: 5003567 (1991-03-01), Hawryluk et al.
patent: 5045417 (1991-09-01), Okamoto
IEEE Transactions on Electron Devices, vol. ED-29, pp. 1828-1836.
IEEE Electron Device Letters, EDL-8, pp. 179-180.
Progress in Optics, vol. 2, 1963, pp. 133-152.

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