Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-06-14
2011-06-14
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185030, C365S185220
Reexamination Certificate
active
07961518
ABSTRACT:
Memory devices adapted to receive and transmit analog data signals representative of bit patterns of two or more bits facilitate increases in data transfer rates relative to devices communicating data signals indicative of individual bits. Programming of such memory devices includes determining a rate of programming (i.e., rate of movement of the respective threshold voltage) of the memory cells and biasing the corresponding bit line with a programming rate control voltage that is greater than the bit line enable voltage and less than the inhibit voltage. This voltage can be adjusted to change the speed of programming. A capacitor coupled to the bit line stores the programming rate control voltage in order to maintain the proper bit line bias for the duration of the programming operation or until it is desired to change the programming rate.
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Auduong Gene N.
Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
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