Static information storage and retrieval – Floating gate – Multiple values
Patent
1996-10-09
1997-11-11
Nelms, David C.
Static information storage and retrieval
Floating gate
Multiple values
36518519, 36518521, 36518533, G11C 1134
Patent
active
056871163
ABSTRACT:
A pulse ramp control circuit allows for the program voltage applied to the control gate of a memory cell to be ramped from a low voltage to a high voltage in a precise manner. The ramp rate of this program voltage is primarily determined by a single capacitor and the bias current provided thereto. By providing a ramped program voltage to the memory array during programming operations, present embodiments effectively cover the entire distribution of program voltage v. program current for the memory cells to be programmed, thereby minimizing over-program and under-program conditions without reducing program time.
REFERENCES:
patent: 5163021 (1992-11-01), Mehrotra et al.
patent: 5198997 (1993-03-01), Arakawa
patent: 5402370 (1995-03-01), Fazio
patent: 5541878 (1996-07-01), LeMoncheck et al.
patent: 5572465 (1996-11-01), Bashir
Kowshik Vikram
Yu Andy Teng-Feng
Nelms David C.
Phan Trong Quang
Programmable Microelectronics Corp.
LandOfFree
Programming pulse ramp control circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Programming pulse ramp control circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Programming pulse ramp control circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1234113