Static information storage and retrieval – Floating gate – Particular biasing
Patent
1989-09-05
1993-01-05
Bowler, Alyssa H.
Static information storage and retrieval
Floating gate
Particular biasing
36518901, 365104, G11C 700, G11C 1600
Patent
active
051777053
ABSTRACT:
A method is described for programming an array of EEPROM cells. Programming occurs through a Fowler-Nordheim tunnel window (34) between a source bitline (24) and a floating gate conductor (42) of a selected cell. The voltages applied to the control gate and to the source are selected to differ sufficiently to cause electrons to be drawn through the tunnel window (34) from the source region (24) to the floating gate conductor (42). The non-selected bitlines have a voltage impressed thereon that is of sufficient value to prevent inadvertent programming of cells in the selected row. The non-selected wordlines (48) have a voltage impressed thereon that is of sufficient value to prevent erasing of programmed non-selected cells.
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D'Arrigo Sebastiano
Gill Manzur
Lin Sung-Wei
McElroy David J.
Bowler Alyssa H.
Texas Instruments Incorporated
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