Programming non-volatile memory devices

Details Programming non-volatile memory devices Programming non-volatile memory devices

2002-01-03

2004-03-02

Nguyen, Van Thu (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185030, C365S185190, C365S185240, C365S230080

Reexamination Certificate

active

06700820

ABSTRACT:

BACKGROUND
The present invention relates to methods for programming non-volatile memory devices.
Non-volatile semiconductor memory is a fundamental building block for a typical computer system. One type of non-volatile semiconductor memory device is the multi-level electrically-erasable programmable read-only memory (“multi-level EEPROM”).
Some memory cells store a signal representing one bit of information. Such memory cells may be placed in either of two states, each representing one of the binary elements “1” or “0.”
In contrast, multi-level cells can store signals representing more than one bit and may be placed into any one of more than two states. Each state corresponds to a pattern of bits and the different states of the cell are distinguished by unique voltage threshold levels.
“Programming” means placing the multi-level memory cell into one of the multi-level memory cell's possible states. Programming may be accomplished by pulsing the multi-level memory cell with a pulse of predetermined voltage and duration. A device that supplies the pulsed power is called a “program pump,” and the number of cells that can be a programmed at one time is referred to as “programming bandwidth.”


REFERENCES:
patent: 5546042 (1996-08-01), Tedrow et al.
patent: 5677869 (1997-10-01), Fazio et al.
patent: 5737265 (1998-04-01), Atwood et al.
patent: 5943260 (1999-08-01), Hirakawa
patent: 5944837 (1999-08-01), Talreja et al.
patent: 6091631 (2000-07-01), Kucera et al.
patent: 6101125 (2000-08-01), Gorman
patent: 6160440 (2000-12-01), Javanifard et al.
patent: 6219276 (2001-04-01), Parker
patent: 6233178 (2001-05-01), Krishnamurthy et al.
patent: 6307785 (2001-10-01), Takeuchi et al.
patent: 2001/0019500 (2001-09-01), Banks
patent: 1 074 995 (2001-02-01), None

Affiliated with

Also associated with

Rating

Programming non-volatile memory devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Programming non-volatile memory devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Programming non-volatile memory devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3238152