Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2007-07-25
2009-02-10
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185240
Reexamination Certificate
active
07489543
ABSTRACT:
Methods and apparatus, such as those for programming of multilevel cell NAND memory arrays to facilitate a reduction of program disturb, are disclosed. In one such method, memory cells are shifted from a first Vt distribution to a second Vt distribution higher than the first Vt distribution during a first portion of a programming operation if a second or a fourth data state is desired, while memory cells remain in the first Vt distribution if the first or a third data state is desired. During a second portion of the programming operating, if the third data state is desired, those memory cells are shifted from the first Vt distribution to a third Vt distribution higher than the second Vt distribution and, if the fourth data state is desired, those memory cells are shifted from the second Vt distribution to a fourth Vt distribution higher than the third Vt distribution.
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Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
Nguyen Tan T.
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