Programming methods for a nonvolatile memory device using a...

Details Programming methods for a nonvolatile memory device using a... Programming methods for a nonvolatile memory device using a...

2006-06-16

2008-07-01

Dinh, Son (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180, C365S185250

Reexamination Certificate

active

07394700

ABSTRACT:
Some embodiments of the present invention provide programming operations for reducing a program time for a nonvolatile memory device. A nonvolatile semiconductor memory device is programmed by receiving data to be programmed into memory cells from a host, programming the data into the memory cells, performing a verify read operation to determine whether the data has been successfully programmed into the memory cells, and performing a Y-scan operation while performing the verify read operation to sequentially scan and output data read from bit lines coupled to the memory cells.

REFERENCES:
patent: 6331945 (2001-12-01), Shibata et al.
patent: 7184356 (2007-02-01), Noguchi et al.
patent: 2003-249082 (2003-09-01), None
patent: 1020030001611 (2003-01-01), None
patent: 1020030018357 (2003-03-01), None

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