Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2005-07-19
2005-07-19
Phan, Trong (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185170
Reexamination Certificate
active
06920066
ABSTRACT:
A method for programming a non-volatile memory device of the multi-level type, includes a plurality of transistor cells grouped into memory words and conventionally provided with gate and drain terminals. The method applies different drain voltage values at different threshold values. Such values are directly proportional to the threshold levels to be attained by the individual memory word bits, and effective to provide for a simultaneous attainment of the levels, in a seeking-to manner, of the levels at the end of a limited number of pulses. Advantageously, a constant gate voltage value is concurrently applied to the gate terminals of said cells, such that the cell programming time is unrelated to the threshold level sought.
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Pascucci Luigi
Riva Marco
Rolandi Paolo
Iannucci Robert
Jorgenson Lisa K.
Phan Trong
Seed IP Law Group PLLC
STMicroelectronics S.r.l.
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