Programming method of the memory cells in a multilevel...

Static information storage and retrieval – Floating gate – Multiple values

Reexamination Certificate

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C365S185170

Reexamination Certificate

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06920066

ABSTRACT:
A method for programming a non-volatile memory device of the multi-level type, includes a plurality of transistor cells grouped into memory words and conventionally provided with gate and drain terminals. The method applies different drain voltage values at different threshold values. Such values are directly proportional to the threshold levels to be attained by the individual memory word bits, and effective to provide for a simultaneous attainment of the levels, in a seeking-to manner, of the levels at the end of a limited number of pulses. Advantageously, a constant gate voltage value is concurrently applied to the gate terminals of said cells, such that the cell programming time is unrelated to the threshold level sought.

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Ohkawa, M., et al., “A 98mm2 Die Size 3.3-V 64-Mb Flash Memory with FN-NOR Type Four-Level Cell,”IEEE Journal of Solid-State Circuits 31(11):1584-1589, Nov. 1996.

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