Programming method for nonvolatile memory cell

Details Programming method for nonvolatile memory cell Programming method for nonvolatile memory cell

2006-03-28

2006-03-28

Ho, Hoai (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185050, C365S185140, C365S185200

Reexamination Certificate

active

07020027

ABSTRACT:
A method of programming a nonvolatile memory cell in which a ramped control voltage is used to obtain the desired voltage on the storage node.

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