Programming method for nonvolatile memory cell

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

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Details

C365S185100, C365S185140, C365S185200, C365S185280

Reexamination Certificate

active

06985386

ABSTRACT:
A method of programming a nonvolatile memory cell in which a ramped control voltage is used to obtain the desired voltage on the storage node.

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U.S. Appl. No. 10/895,710, filed Jul. 8, 2004.
U.S. Appl. No. 10/895,712, filed Jul. 8, 2004.

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