Programming method for nonvolatile memory cell

Details Programming method for nonvolatile memory cell Programming method for nonvolatile memory cell

2006-05-09

2006-05-09

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185100, C365S185140

Reexamination Certificate

active

07042763

ABSTRACT:
A method of selectively programming nonvolatile memory cells in which multiple programming voltages are used to obtain the desired voltage on the storage nodes of the cells selected for programming, while the storage nodes of unselected cells remain undisturbed.

REFERENCES:
patent: 6903978 (2005-06-01), Mirgorodski et al.
patent: 6985386 (2006-01-01), Mirgorodski et al.
patent: 6992927 (2006-01-01), Poplevine et al.

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