Programming method for non-volatile memory and non-volatile...

Details Programming method for non-volatile memory and non-volatile... Programming method for non-volatile memory and non-volatile...

2008-04-22

2008-04-22

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Disturbance control

C365S185220, C365S185240, C365S185300, C365S185330

Reexamination Certificate

active

07362610

ABSTRACT:
A method for programming a flash memory cell comprises providing input data to the flash cell and providing a segmented programming pulse to the flash memory cell. The segmented programming pulse includes programming segments, each successive programming segment including a programming potential higher than the programming potential used in a previous programming segment, each programming segment followed by a zero-potential compare segment. The output of the flash memory cell is compared with the input data during the compare segment after each programming segment. The segmented programming pulse is terminated if the output of the flash memory cell matches the input data. The programming potential in each programming segment is increased during the programming segment. The programming potential in successive segments is either is increased or stepped up to the final value of the previous programming segment.

REFERENCES:
patent: 5483486 (1996-01-01), Javanifard et al.
patent: 5526307 (1996-06-01), Yiu et al.
patent: 5594360 (1997-01-01), Wojciechowski
patent: 5671179 (1997-09-01), Javanifard
patent: 5907700 (1999-05-01), Talreja et al.
patent: 5944837 (1999-08-01), Talreja et al.
patent: 6088268 (2000-07-01), Gupta et al.
patent: 6166959 (2000-12-01), Gupta et al.
patent: 6504760 (2003-01-01), Tedrow
patent: 6597606 (2003-07-01), Tedrow
patent: 6711058 (2004-03-01), Hirano
patent: 6724662 (2004-04-01), Manea
patent: 6980471 (2005-12-01), Samachisa
patent: 2005/0162914 (2005-07-01), Jung

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