Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2007-11-06
2007-11-06
Le, Vu A. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185270
Reexamination Certificate
active
11215933
ABSTRACT:
A NAND architecture non-volatile memory device and programming process is described that programs the various cells of strings of non-volatile memory cells by the application of differing word line pass voltages (Vpass) to the unselected word lines of the memory cell string or array during an programming cycle. In one embodiment of the present invention, the differing word line pass voltages (Vpass) are utilized depending on the placement of the memory cell in the NAND memory cell string. In another embodiment of the present invention, the differing word line pass voltages (Vpass) are utilized to compensate for faster and slower programming word lines/memory cells.
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Aritome Seiichi
Goda Akira
Marquart Todd
Le Vu A.
Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
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