Programming method for a multilevel memory cell

Details Programming method for a multilevel memory cell Programming method for a multilevel memory cell

2006-08-08

2006-08-08

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Floating gate

Multiple values

C365S185200, C365S185180, C365S185190, C365S185220, C365S185240

Reexamination Certificate

active

07088614

ABSTRACT:
A programming method of a multilevel memory cell is able to store a plurality of bits in a plurality of levels. The method includes writing a logic value in the multilevel memory cell by setting one of the programming levels thereof, these levels being included in the plurality of levels, with respect to a reference level according to the symbol to be written and to a previous programming level. The writing step is repeated until a highest possible value for the levels is reached. A multilevel memory device includes a plurality of multilevel memory cells organized into sectors, split into a plurality of data units whereon a programming operation is performed in parallel.

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