Programming in memory devices using source bitline voltage bias

Details Programming in memory devices using source bitline voltage bias Programming in memory devices using source bitline voltage bias

2007-12-13

2010-06-29

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185150, C365S185280

Reexamination Certificate

active

07746698

ABSTRACT:
Systems and methods that facilitate improved programming memory cells in a nonvolatile memory (e.g., flash memory) are presented. An optimized voltage component can facilitate supplying respective voltages to a source, drain, and gate associated with a memory cell during operations, such as programming operations. The optimized voltage component can facilitate supplying a predetermined source bitline voltage to a memory cell during programming of the cell to facilitate reducing leakage currents associated with the bitlines, which can improve programming of the memory cell, and to facilitate reducing the programming current, which can result in power efficient programming and improved programming speed.

REFERENCES:
patent: 6882567 (2005-04-01), Wong
patent: 2008/0266964 (2008-10-01), Sekar et al.
patent: 2008/0298124 (2008-12-01), Wong

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