Programming in a memory device

Details Programming in a memory device Programming in a memory device

2011-07-19

2011-07-19

Tran, Michael T (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185240

Reexamination Certificate

active

07983088

ABSTRACT:
Methods for programming a memory device, memory devices, and a memory systems are provided. According to at least one such method, a selected memory cell is programmed by a series of programming pulses. The series of programming pulses are configured in sets of programming pulses where each set has the same quantity of pulses and each programming pulse in the set has substantially the same amplitude (i.e., programming voltage). The amplitude of the programming pulses of subsequent sets is increased by a step voltage from the previous amplitude.

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patent: WO 96/41346 (1996-12-01), None
patent: WO 2005/101424 (2005-10-01), None
patent: WO 2008/013619 (2008-01-01), None

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