Programming floating gate devices

Details Programming floating gate devices Programming floating gate devices

1981-11-27

1984-02-28

Popek, Joseph A.

Static information storage and retrieval

Floating gate

Particular biasing

365104, G11C 1140

Patent

active

044344783

ABSTRACT:
A memory system is provided wherein extended injection-limited programming techniques attain a substantially uniform programming behavior from an ensemble of fabricated devices or cells to provide the maximum obtainable voltage threshold shift within a minimum time period. In order to produce these desired results, a floating gate of a device is charged by applying to the control gate of the device a first voltage during a portion of this time period which produces an accelerating field in a dielectric layer disposed adjacent to the floating gate and then applying to the control gate during the remaining portion of this time period a second voltage of greater magnitude than that of the first voltage prior to or when the accumulation of charge on the floating gate causes a retarding field to be established in the dielectric layer.

REFERENCES:
patent: 3914855 (1974-10-01), Cheney et al.
patent: 4055837 (1977-10-01), Stein et al.
patent: 4104675 (1978-08-01), Dimaria et al.
patent: 4161039 (1979-07-01), Rossler
patent: 4334292 (1982-06-01), Kotecha
patent: 4336603 (1982-06-01), Kotecha et al.
patent: 4366555 (1982-12-01), Hu
patent: 4376947 (1983-03-01), Chiu et al.
T. P. Cauge et al., Electronics, Feb. 15, 1971, "Double-diffused MOS Transistor Achieves Microwave Gain", pp. 99-104.
P. E. Cottrell et al., IEEE Journal of Solid-State Circuits, vol. SC-14, No. 2, Apr. 1979, "Hot-Electron Emission in N-Channel IGFET's ", pp. 442-455.

Affiliated with

Also associated with

Rating

Programming floating gate devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Programming floating gate devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Programming floating gate devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-761910