Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – Fusible link or intentional destruct circuit
Patent
1996-12-24
1999-01-12
Tran, Toan
Miscellaneous active electrical nonlinear devices, circuits, and
Specific identifiable device, circuit, or system
Fusible link or intentional destruct circuit
365 96, 3652257, G11C 1708
Patent
active
058595627
ABSTRACT:
The area of the switching devices for programming metal-to-metal antifuses can be drastically reduced by employing bipolar devices or the bipolar effects of SCR type switches to pass large currents while utilizing the minimum amount of die area. The switching devices may be formed in both p-type and n-type substrates. In a first antifuse programming structure fabricated on a p-type substrate, an NPN bipolar transistor is used as a pullup device and an SCR is used as a pulldown device. In a second antifuse programming structure, SCR devices are used as both pullup and pulldown devices. In a third antifuse programming structure fabricated on a p-type substrate, an NPN bipolar transnsistor is used as a pullup device and a PNP bipolar transistor is used as a pulldown device. In a fourth antifuse programming structure fabricated on a p-type substrate, an NPN bipolar transistor is used as a pullup device and a N-channel MOS transistor is used as a pulldown device. In a fifth antifuse programming structure fabricated on a p-type substrate, a PNP bipolar transistor is used as a pullup device and an SCR is used as a pulldown device. In a sixth antifuse programming structure fabricated on a p-type substrate, an MOS transistor is used as a pullup device and an SCR is used as a pulldowu device. In a seventh antifuse programming structure fabricated on a n-ype substrate, an SCR is used as a pullup device and an N-channel MOS transistor is used as a pulldown device. In a eighth antifuse programming structure fabricated on a n-type substrate, an NPN bipolar transistor is used as a pullup device and a N-channel MOS transistor is used as a pulldown device.
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Actel Corporation
Luu An T.
Tran Toan
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