Programming and erasing method for charge-trapping memory...

Details Programming and erasing method for charge-trapping memory... Programming and erasing method for charge-trapping memory...

2007-09-25

2007-09-25

Mai, Son L. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185240, C365S185280

Reexamination Certificate

active

10951999

ABSTRACT:
A method for programming and erasing charge-trapping memory device is provided. The method includes applying a first negative voltage to a gate causing a dynamic balance state (RESET\ERASE state). Next, a positive voltage is applied to the gate to program the device. Then, a second negative voltage is applied to the gate to restore the device to the RESET\ERASE state.

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