Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1981-04-08
1982-12-21
Roy, Upendra
Metal working
Method of mechanical manufacture
Assembling or joining
29571, 148 15, 148187, 357 23, 357 45, 357 91, B01J 1700, G11C 1140, G11C 1700, H01L 21263
Patent
active
043641679
ABSTRACT:
An IGFET ROM is programmed late in its process of manufacture. An array of IGFETs having an operable channel region and gate electrode is provided. The gate electrode is penetrable by an ion beam. A first dielectric penetrable by the ion beam is deposited onto the array. A second dielectric not penetrable by the ion beam is then deposited onto the array. Windows are then etched into the second dielectric material but not the first, over channel regions of selected IGFETs. The wafer surface is given an ion implantation to change threshold voltage of those IGFETs selected. A metallization pattern is formed on the second dielectric, with the first dielectric providing an insulating coating for gate electrode portions otherwise exposed within the aforementioned windows.
REFERENCES:
patent: 3475234 (1969-10-01), Kerwin et al.
patent: 3541543 (1970-11-01), Crawford et al.
patent: 3751722 (1973-08-01), Richard
patent: 3775191 (1973-11-01), McQuhae
patent: 3914855 (1974-10-01), Cheney et al.
patent: 3917495 (1975-11-01), Horn et al.
patent: 4091406 (1978-05-01), Lewis
patent: 4097889 (1978-06-01), Kern et al.
patent: 4103415 (1978-08-01), Hayes
patent: 4129936 (1978-12-01), Takei
patent: 4136434 (1979-01-01), Thibault et al.
patent: 4169270 (1979-09-01), Hayes
patent: 4198693 (1980-04-01), Kuo
patent: 4208727 (1980-06-01), Redwine et al.
patent: 4208780 (1980-06-01), Richman
patent: 4230504 (1980-10-01), Kuo
patent: 4271582 (1981-06-01), Shirai et al.
patent: 4290184 (1981-09-01), Kuo
patent: 4294001 (1981-10-01), Kuo
"ROM Program Process . . . ", Electronics, May 25, 1978, pp. 39-40.
General Motors Corporation
Roy Upendra
Wallace Robert J.
LandOfFree
Programming an IGFET read-only-memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Programming an IGFET read-only-memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Programming an IGFET read-only-memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-400650