Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-05-18
2008-08-12
Elms, Richard T. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185330, C365S185170
Reexamination Certificate
active
07411832
ABSTRACT:
A non-volatile memory device that changes the programming step voltage between the source side of the array and the drain side of the array. After the initial programming pulse, a verify operation determines if the cell has been programmed. If the cell is still erased, the initial programming voltage is increased by the step voltage. The step voltage for the lowest word line near the source line is lower than the step voltage for the word line closest to the drain line.
REFERENCES:
patent: 5272669 (1993-12-01), Samachisa et al.
patent: 5323351 (1994-06-01), Challa
patent: 5768191 (1998-06-01), Choi
patent: 5943261 (1999-08-01), Lee
patent: 6567302 (2003-05-01), Lakhani
patent: 6614688 (2003-09-01), Jeong et al.
patent: 6768682 (2004-07-01), Yano et al.
patent: 6954380 (2005-10-01), Ono et al.
patent: 7020017 (2006-03-01), Chen et al.
patent: 7038949 (2006-05-01), Chae et al.
patent: 7301817 (2007-11-01), Li et al.
Elms Richard T.
Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
Nguyen Nam
LandOfFree
Programming a non-volatile memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Programming a non-volatile memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Programming a non-volatile memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4001898