Programming a non-volatile memory device

Details Programming a non-volatile memory device Programming a non-volatile memory device

2006-05-18

2008-08-12

Elms, Richard T. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185330, C365S185170

Reexamination Certificate

active

07411832

ABSTRACT:
A non-volatile memory device that changes the programming step voltage between the source side of the array and the drain side of the array. After the initial programming pulse, a verify operation determines if the cell has been programmed. If the cell is still erased, the initial programming voltage is increased by the step voltage. The step voltage for the lowest word line near the source line is lower than the step voltage for the word line closest to the drain line.

REFERENCES:
patent: 5272669 (1993-12-01), Samachisa et al.
patent: 5323351 (1994-06-01), Challa
patent: 5768191 (1998-06-01), Choi
patent: 5943261 (1999-08-01), Lee
patent: 6567302 (2003-05-01), Lakhani
patent: 6614688 (2003-09-01), Jeong et al.
patent: 6768682 (2004-07-01), Yano et al.
patent: 6954380 (2005-10-01), Ono et al.
patent: 7020017 (2006-03-01), Chen et al.
patent: 7038949 (2006-05-01), Chae et al.
patent: 7301817 (2007-11-01), Li et al.

Affiliated with

Also associated with

Rating

Programming a non-volatile memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Programming a non-volatile memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Programming a non-volatile memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4001898