Programming a NAND flash memory with reduced program disturb

Details Programming a NAND flash memory with reduced program disturb Programming a NAND flash memory with reduced program disturb

2007-05-30

2011-11-15

Nguyen, Tuan T (Department: 2824)

Static information storage and retrieval

Floating gate

Multiple values

C365S185240, C365S185020, C365S185180

Reexamination Certificate

active

08059456

ABSTRACT:
When a memory device receives two or more pluralities of bits from a host to store in a nonvolatile memory, the device first stores the bits in a volatile memory. Then, in storing the bits in the nonvolatile memory, the device raises the threshold voltages of some cells of the volatile memory to values above a verify voltage. While those threshold voltages remain substantially at those levels, the device raises the threshold voltages of other cells of the volatile memory to values below the verify voltage. In the end, every cell stores one or more bits from each plurality of bits. Preferably, all the cells share a common wordline. A data storage device operates similarly with respect to storing pluralities of bits generated by an application running on the system.

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