Programming a memory device

Details Programming a memory device Programming a memory device

2007-09-11

2007-09-11

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185240, C365S185190, C365S185280

Reexamination Certificate

active

11174560

ABSTRACT:
A method of programming a memory cell in a non-volatile memory device includes applying a first voltage to a control gate associated with the memory cell and applying a second voltage to a drain region associated with the memory cell. The method also includes applying a positive bias to a source region associated with the memory cell and/or applying a negative bias to a substrate region associated with the memory cell.

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Bloom et al., “NROM<TM>—a new technology for non-volatile memory products”, Solid State Electronics, Elsevier Science Publishers, Barking, GB, vol. 46, No. 11, Nov. 2002, pp. 1757-1763.
PCT Search Report and Written Opinion, Jan. 19, 2007, 12 pages.

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