Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-09-11
2007-09-11
Nguyen, Viet Q. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185240, C365S185190, C365S185280
Reexamination Certificate
active
11174560
ABSTRACT:
A method of programming a memory cell in a non-volatile memory device includes applying a first voltage to a control gate associated with the memory cell and applying a second voltage to a drain region associated with the memory cell. The method also includes applying a positive bias to a source region associated with the memory cell and/or applying a negative bias to a substrate region associated with the memory cell.
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PCT Search Report and Written Opinion, Jan. 19, 2007, 12 pages.
He Yi
Liu Zhizheng
Sinha Shankar
Harrity & Snyder LLP
Nguyen Viet Q.
Spansion LLC
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