Programming a flash memory device

Details Programming a flash memory device Programming a flash memory device

2008-07-22

2008-07-22

Luu, Pho M. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185170, C365S185330

Reexamination Certificate

active

07403425

ABSTRACT:
An initial verify read operation is performed after each programming pulse. The verify voltage starts at an initial verify voltage for the first word line and increases for each word line that is verified up to a maximum verify voltage. A second verify read operation is then performed after the program/verify operation. The second verify read operation uses a verify voltage that is substantially close to the maximum verify voltage used during the program/verify step.

REFERENCES:
patent: 6240018 (2001-05-01), Miyamoto et al.
patent: 6490201 (2002-12-01), Sakamoto
patent: 6498752 (2002-12-01), Hsu et al.
patent: 6950344 (2005-09-01), Fastow et al.
patent: 6996004 (2006-02-01), Fastow et al.
patent: 6999345 (2006-02-01), Park et al.
patent: 7020017 (2006-03-01), Chen et al.
patent: 7062599 (2006-06-01), Pistilli
patent: 7151694 (2006-12-01), Meihong et al.

Affiliated with

Also associated with

Rating

Programming a flash memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Programming a flash memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Programming a flash memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2811828