Programmed defect mask with defects smaller than 0.1 .mu.m

Details Programmed defect mask with defects smaller than 0.1 .mu.m Programmed defect mask with defects smaller than 0.1 .mu.m

1998-04-30

2000-04-11

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430324, G03F 900

Patent

active

06048649&

ABSTRACT:
A method is provided for making sublithographic structures, such as programmed defect masks. The method comprises the steps of forming a layer of base material on a substrate, the base material being selectively definable from the substrate, forming a layer of photosensitive material over the layer of material, selectively exposing a plurality of image segments in the photosensitive material in which segments are offset from each other by a sub-lithographic dimension in a first direction and a different dimension in a second direction and a sub-plurality of the segments pass over the layer of base material, and developing the photosensitive material to expose the layer within the sub-plurality of segments. Also provided is the resulting programmed defect mask with defects under 0.1 .mu.m in size.

REFERENCES:
patent: 4762805 (1988-08-01), Cheung et al.
patent: 5087537 (1992-02-01), Conway et al.
patent: 5260175 (1993-11-01), Kowanz et al.
patent: 5585211 (1996-12-01), Firstein et al.
patent: 5804088 (1998-09-01), McKee

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