Programmable write-once, read-only semiconductor memory array us

Static information storage and retrieval – Read only systems – Fusible

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Details

307238, 307270, 365105, 365189, G11C 1706, G11C 700

Patent

active

041308891

ABSTRACT:
This disclosure relates to a programmable write-once, read-only semiconductor memory array which has an improved current source for each bit line and an improved current sink for each Word line. This programmable write-once, read-only semiconductor memory array utilizes a SCR (PNPN or NPNP) or the end of each Word line of the array to function as a current sink to minimize voltage drop on the Word line and a SCR (PNPN or NPNP) on each Bit line of the array for current sourcing purposes. This disclosure also relates to an integrated SCR (PNPN or NPNP) for use with a plurality of connected semiconductor devices to provide either a current sourcing or current sinking or drawing function for the plurality of connected semiconductor devices.

REFERENCES:
patent: 3611319 (1971-10-01), Hyatt
patent: 3721964 (1973-03-01), Barret et al.
patent: 3989957 (1976-11-01), Tuccu
patent: 4015143 (1977-03-01), Tokunaga et al.

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