1989-01-19
1991-11-26
James, Andrew J.
357 34, 357 36, 357 44, H01L 2972, H01L 2702
Patent
active
050687026
ABSTRACT:
An improved cell structure and method for making the same for semicustom chips which can be connected at the metalization step to form either an NPN or a PNP transistor and which has approximately the same cell size as a single PNP or NPN transistor. A central P-doped region forms the emitter of the PNP transistor. This is partially surrounded by another P-doped region which forms the collector of the PNP transistor. An N-doped region is diffused into one of the P-doped regions to form the emitter of an NPN transistor, with the selected P-doped region becoming the base of the NPN transistor. In the gaps of the second P-doped region surrounding the central P-doped region is an N-doped region which forms either the base of the PNP transistor or the collector of the NPN transistor.
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Advertisement "The Orderly World of Sahni Semicustom": Circle No. 25.
"Plessey's High-Density Bipolar Arrays Toggle at 4.5 GHz", Electronics, Sep. 1988 pp. 78-79.
Exar Corporation
James Andrew J.
Ngo Ngan Van
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