Programmable structure including an oxide electrolyte and...

Semiconductor device manufacturing: process – Having metal oxide or copper sulfide compound semiconductor...

Reexamination Certificate

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C257S043000, C257SE45002

Reexamination Certificate

active

07101728

ABSTRACT:
A microelectronic programmable structure suitable for storing information and methods of forming and programming the structure are disclosed. The programmable structure generally includes an oxide ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure, and thus information may be stored using the structure.

REFERENCES:
patent: 5761115 (1998-06-01), Kozicki et al.
patent: 6418049 (2002-07-01), Kozicki et al.
patent: 6487106 (2002-11-01), Kozicki
patent: 6818481 (2004-11-01), Moore et al.

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