Programmable semiconductor memory device having grouped high vol

Details Programmable semiconductor memory device having grouped high vol Programmable semiconductor memory device having grouped high vol

1985-12-24

1989-02-14

Fears, Terrell W.

Static information storage and retrieval

Addressing

365226, 307530, G11C 800, G11C 700, H03F 345

Patent

active

048051500

ABSTRACT:
In a programmable semiconductor memory device, a plurality of transistors operated as switches are provided, one switch transistor for each row and/or column lines. These switch transistors are divided into a plurality of groups. One terminal of each switch transistor is connected to the corresponding row and/or column line. A plurality of high voltage supply circuits are provided, one for each switch transistor group. A supplemental decoder is employed to select the switch transistor connected to the row and/or column line selected by a row and/or column decoder, to turn the selected switch transistor on so that the selected row and/or column line is supplied with a high voltage from the high voltage supply cirucit corresponding to the group including the selected switch transistor.

REFERENCES:
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patent: 4549102 (1985-10-01), Segawa et al.
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patent: 4627027 (1986-12-01), Rai et al.
patent: 4653026 (1987-03-01), Komori et al.
patent: 4686651 (1984-11-01), Armstrong et al.
"High-Voltage Regulation and Process Considerations for High-Density 5 V-Only E.sup.2 PROM's", Oto et al., 8107.
IEEE Journal of Solid-State Circuits, vol. SC-18, No. 5 New York, USA; pp. 532-538.

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