Programmable semiconductor memory

Details Programmable semiconductor memory Programmable semiconductor memory

1995-11-13

1997-07-08

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257 50, 257379, 257529, 365 96, 3652257, H01L 2904

Patent

active

056464380

ABSTRACT:
A programmable semiconductor memory is disclosed which can be fabricated with an MOS process of low complexity and which takes up little space. The memory comprises a MOS field-effect transistor having an antifuse region between the gate electrode and the drain region. Prior to application of a programming voltage, the antifuse region electrically isolates the gate electrode and the drain region from each other. On application of the programming voltage to the gate electrode, which is greater than the supply voltage applied between the drain and the source, the antifuse region changes to a low-impedance state.

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