Programmable semiconductor device with high breakdown voltage an

Details Programmable semiconductor device with high breakdown voltage an Programmable semiconductor device with high breakdown voltage an

1994-10-04

1996-10-01

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257513, 257910, H01L 2710, H01L 23525

Patent

active

055613152

ABSTRACT:
A programmable semiconductor memory with filament or point diodes in the intersections of a matrix system can be manufactured with minimum dimensions and thus with a very high density owing to the absence of alignment tolerances. A possible problem is then posed by the strong leakage currents which may arise during programming owing to punch-through between adjoining diodes. Decreasing the leakage current through the use of a higher background concentration of the region in which these diodes are formed is not possible because this reduces the breakdown voltage of the pn junctions of the diodes too much. According to the invention, a more strongly doped surface zone is provided in the region between the diodes, which zone is situated at least at a distance from the diode points. In a specific embodiment, the zone extends less deeply into the region than do the diodes. The invention is based on the recognition that the breakdown voltage is determined by the location where the curvature of the diode is strongest. The zone suppresses the leakage current to a high degree, while the breakdown voltage of the diodes remains sufficiently high.

REFERENCES:
patent: 4881114 (1989-11-01), Moshen et al.
patent: 5416343 (1995-05-01), Slotboom et al.

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