Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1994-03-31
1997-04-29
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257 50, 257209, H01L 2904, H01L 2710, H01L 2900
Patent
active
056252196
ABSTRACT:
A programmable device uses anti-fuse elements. The device has a wiring layer on an insulator film on a semiconductor substrate, and it is programmed by connected condition of this wiring. The wiring is separated, such as a first wiring line and a second wiring line on the same plane, beforehand so has been disconnected at separated nodes. A thin insulator film is formed on the disconnection nodes at least, and a further floating electrode, consisting of an aluminum alloy, is formed on the thin insulator film, so that an anti-fuse element is formed straddling the first and the second wiring. When it is programmed, in order to change the disconnected anti-fuse element into a conductive state, a destructive electric potential difference is impressed between the first and the second wiring lines through the thin insulator film. As a result, the thin insulator film is broken, so that the first and the second wiring lines are connected with the floating electrode.
REFERENCES:
patent: 5412245 (1995-05-01), Favreau
patent: 5416355 (1995-05-01), Kudoh
Takagi et al., "Highly Reliable Metal-to-Metal Antifuse for High Speed Field Programmable Gate Arrays", 1993 IEEE, IEDM 2.7.1-2.7.4.
Cook et al., "A-si Antifuse Tech. for Bipolar PROMS", Bipolar Circuits and Technology Meeting, IEEE, 1986, 99-100.
Kabushiki Kaisha Toshiba
Martin Wallace Valencia
Saadat Mahshid D.
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