Programmable semiconductor antifuse structure and method of fabr

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257530, 257 2, 437192, 365 94, H01L 2910, H01L 21283

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active

052726665

ABSTRACT:
A programmable semiconductor antifuse structure and method of fabricating are provided which allow for miniaturization of components to an area of less than one micron. The cell exhibits a high pre-programmed resistance of more than 1.times.10.sup.7 ohms and has an extremely low programmed cell resistance of around 50 ohms.

REFERENCES:
patent: 4377856 (1983-03-01), Roesner
patent: 4424579 (1984-01-01), Roesner
patent: 4442507 (1984-04-01), Roesner
patent: 4569120 (1986-02-01), Stacy et al.
patent: 4569121 (1986-02-01), Lim et al.
patent: 4748490 (1988-05-01), Hollingsworth
patent: 4758745 (1988-07-01), Elgamal et al.
patent: 4796074 (1989-01-01), Roesner
patent: 4914055 (1990-04-01), Gordon et al.
patent: 5095362 (1992-03-01), Roesner
patent: 5166901 (1992-11-01), Shaw et al.
Vinod Malhotra, John E. Mahan, and Daniel L. Ellsworth, "An Electrothermal Model of Memory Switching In Vertical Polycrystalline Silicon Structures", IEEE Transactions on Electron Devices vol. 35, No. 9, Sep. 1988, pp. 1514-1523.
Yosi Shacham-Diamand, Alex Sinar, Eric Sirkin, Ilan Blech, and Levy Gerzberg, "IPEL-A Novel Ion-Implanted Electrically Programmable Element", IEEE Electron Device Letters vol. 10, No. 5, May 1989, pp. 180-182.
Vinod Malhotra, John E. Mahan, and Daniel L. Ellsworth, "Fundamentals Of Memory Switching In Vertical Polycrystalline Silicon Structures", IEEE Transactions On Electron Devices vol. ED-32, No. 11, Nov. 1985, pp. 2441-2449.
Noriaki Sato, Takahiro Nawata, and Kunihiko Wada, "A New Programmable Cell Utilizing Insulator Breakdown", IC Development Division, Fujitsu Limited Nakahara-ku, Kawasaki 211, Japan, 1985 pp. 639-642.

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