Programmable resistive RAM and manufacturing method

Details Programmable resistive RAM and manufacturing method Programmable resistive RAM and manufacturing method

2006-07-14

2010-06-22

Booth, Richard A. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Semiconductor is selenium or tellurium in elemental form

C257S043000, C438S102000

Reexamination Certificate

active

07741636

ABSTRACT:
Integrated circuit nonvolatile memory uses programmable resistive elements. In some examples, conductive structures such as electrodes are prepared, and the programmable resistive elements are laid upon the prepared electrodes. This prevents contamination of the programmable resistive elements from previous fabrication steps.

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