Programmable resistive memory cell with filament placement...

Details Programmable resistive memory cell with filament placement... Programmable resistive memory cell with filament placement...

2011-03-01

2011-03-01

Pham, Hoai v (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S004000, C257SE43001, C257SE31029

Reexamination Certificate

active

07897955

ABSTRACT:
Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.

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patent: 2010/0006813 (2010-01-01), Xi et al.
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