Programmable resistance memory element with titanium rich...

Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular signal path connections

Reexamination Certificate

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C257S225000, C257S226000, C257S227000, C257S228000, C257S229000, C257S230000, C257S231000, C257S232000, C257S233000, C257S234000, C257S390000, C257S391000, C257S529000, C257S530000, C257S758000, C257S760000, C257S770000, C257S774000

Reexamination Certificate

active

07129531

ABSTRACT:
A programmable resistance memory element comprising an adhesion layer between the programmable resistance material and at least one of the electrodes. Preferably, the adhesion layer is a titanium rich titanium nitride composition.

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