Programmable resistance memory element with multi-regioned...

Details Programmable resistance memory element with multi-regioned... Programmable resistance memory element with multi-regioned...

2004-07-15

2009-08-18

Tsai, H. Jey (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S004000, C257SE21680

Reexamination Certificate

active

07576350

ABSTRACT:
An electrically programmable memory element comprising a programmable resistance material and an electrical contact. The electrical contact having at least two portion wherein the first portion has a higher resistivity than the second portion.

REFERENCES:
patent: 6555860 (2003-04-01), Lowrey et al.
patent: 6563164 (2003-05-01), Lowrey et al.
patent: 7023009 (2006-04-01), Kostylev et al.

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