Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2006-08-25
2009-12-29
Luu, Chuong A. (Department: 2892)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S095000, C438S102000, C438S093000, C257S214000, C257S298000
Reexamination Certificate
active
07638357
ABSTRACT:
A programmable resistance memory element and method of forming the same. The memory element includes a first electrode, a dielectric layer over the first electrode and a second electrode over the dielectric layer. The dielectric layer and the second electrode each have sidewalls. A layer of programmable resistance material, e.g., a phase change material, is in contact with the first electrode and at least a portion of the sidewalls of the dielectric layer and the second electrode. Memory devices including memory elements and systems incorporating such memory devices are also disclosed.
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International Search Report w/Written Opinion, Feb. 29, 2008.
Dickstein & Shapiro LLP
Luu Chuong A.
Micro)n Technology, Inc.
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