Programmable reference voltage generator for a read only memory

Details Programmable reference voltage generator for a read only memory Programmable reference voltage generator for a read only memory

1985-04-04

1988-06-28

Hecker, Stuart N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

365104, 365210, 365226, 323313, H03K 301, G05F 316, G11C 1700

Patent

active

047541679

ABSTRACT:
A read only memory (ROM) includes a series of bit lines biased by a reference voltage lead (102). The reference voltage lead (102) is connected to a first reference voltage generator (100) having an output impedance of 25 ohms and a second reference voltage generator (104) having an output impedance of 75,000 ohms. When the ROM is deselected, the first reference voltage generator (100) turns off and the bit lines are biased by the second reference voltage generator (100). However, when the ROM is selected, the first reference voltage generator (100) is turned on and biases the bit lines. In this way, a ROM is provided which can operate in a low power mode without decreasing the access time when the ROM goes from a deselected state into a selected state.

REFERENCES:
patent: 4460835 (1984-07-01), Masuoka
Denis et al, "Voltage Reference Circuit", IBM Technical Disclosure Bulletin, vol. 19, No. 10, Mar. 1977, p. 3760.

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