Programmable read only memory with output indicating programming

Details Programmable read only memory with output indicating programming Programmable read only memory with output indicating programming

1992-02-14

1995-02-21

Harvey, Jack B.

Static information storage and retrieval

Magnetic bubbles

Guide structure

365 96, 365104, 365105, G11C 1716

Patent

active

053924185

ABSTRACT:
A non-volatile memory cell including a pn diode and a circuit for sensing the logic state of the pn diode such that a logic one state indicates that the diode is in its normal state, while the other logic state is created by fusing the diode for creating a short circuit. The circuit for sensing the logic state of the diode includes a circuit for developing a sense voltage across the diode, a first comparator for comparing the sense voltage with a first reference voltage greater than the normal junction voltage, a second comparator for comparing the sense voltage with a second reference voltage less than the normal junction voltage but greater than the fused junction voltage and a circuit responsive to the outputs of the first and second comparators to provide an output signal which has a first value if the sense voltage is between the first and second reference voltages and a second value if the sense voltage is not between the first and second reference voltages.

REFERENCES:
patent: 3810127 (1974-05-01), Hoff, Jr.
patent: 4312046 (1982-01-01), Taylor
patent: 4609998 (1986-09-01), Bosnyak et al.
patent: 4686384 (1987-08-01), Harvey et al.
patent: 4757359 (1988-07-01), Chiao et al.
patent: 4882666 (1989-11-01), Brunning et al.
patent: 4935645 (1990-06-01), Lee

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