Programmable read only memory with means for discharging bit lin

Details Programmable read only memory with means for discharging bit lin Programmable read only memory with means for discharging bit lin

1988-06-27

1990-06-26

Hecker, Stuart N.

Static information storage and retrieval

Read only systems

365104, 365185, 365201, 36518903, 365194, 365203, 371 211, G11C 700, G11C 1142

Patent

active

049377876

ABSTRACT:
A semiconductor memory in which each of memory cells includes a memory transistor having a control gate connected to a word line, a floating gate and a drain-source path connected to a bit line, is disclosed. In a data programming operation mode, a programming voltage is applied via the word and bit lines to the control gate and the drain-source path of the memory transistor to inject carriers into the floating gate thereof. In order to detect whether or not the memory transistor is well programmed, a program verifying operation is carried out successively. To this end, the bit line is discharged to the low level and the word line is then supplied with a reading-out voltage. If the data programming is insufficient, the memory transistor is turned ON by the reading-out voltage, so that the bit line is held at a level near the low level. On the other hand, in case where the memory transistor is well programmed, it is not turned ON by the reading-out, so that the bit line is charged.

REFERENCES:
patent: 4543647 (1985-09-01), Yoshida
patent: 4553225 (1985-11-01), Ohe
patent: 4612630 (1986-09-01), Rosier
patent: 4737936 (1988-04-01), Takeuchi
patent: 4779272 (1988-10-01), Kohda et al.

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